Gold Index: 2657
Homray Material Technology Co., Ltd [China (Mainland)]
Business Type:Manufacturer City: Suzhou Province/State: Jiangsu Country/Region: China (Mainland)
Mechanical Grade SiC Ingots Supplier Get SiC wafer Factory Price
4 inch
100mm (4 inch) Silicon Carbide (SiC) Ingots and SiC wafers 4H in stock. High-quality, low defect density epitaxial wafers & ingots for high-power devi
2022-04-02
4H-SI type SiC ingots supplier and SiC substrate manufacturer
Silicon carbide 4H-SiC Ingots and SiC wafers, dia 100 mm 4 inch and dia 150mm 6 inch SiC ingots manufacturers, suppliers & exporters HMT in China.
N type SiC ingots manufacturer competitive price
6 inch
GaN template manufacturer GaN-On-Sapphire
2inch
HomrayMaterial Technology provide 2inch and 4inch GaN-On-Sapphire substrate wafer.
2021-02-09
N type GaN Wafer 2 inch GaN template 4inch Gallium Nitride wafer
Homray Material Technology has established the manufacturing technology for free-standing Gallium Nitride wafer GaN substrate which is for UHB-LED and
2017-12-07
4''Gallium Nitride template GaN wafer supplier Gallium Nitride substrate
Dummy SiC wafer Test Silicon Carbide wafer semiconductor SiC substrate
6inch
Excellent tension control and yield strengthPlace of Origin: China (Mainland)Brand Name: Homray Material Technology Grade:Production Grade/Rese
Test SiC wafer research Silicon Carbide wafer substrate
3inch
Place of Origin: China (Mainland)Brand Name: Homray Material Technology Grade:Production Grade/Research Grade/Dummy GradeType: 4H-N/6H-N 4/6H-
Silicon Carbide wafer supplier provide SiC substrate semiconductor wafer
2 inch Free-Standing GaN wafers GaN substrate Gallium Nitride wafer manufacturer
Gallium Nitride substrate N type GaN Wafer GaN template manufacturer
Homray Material Technology plans to be a manufacturer of gallium nitride substrate for the wide band-gap power semiconductor and LED markets.
GaN wafer manufacturer provide Gallium Nitride templates
2 inch
Homray Material Technology's advanced proprietary technology enables cost effective starting substrates for GaN material research and development or