Homray Material Technology offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has  developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company,we are devoted to continuously improve the quality of currently substates and develop large size substrates.

SiC wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of SiC can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.