6 inch SiC ingots manufacturer competitive price 

Silicon carbide 4H-SiC Ingots and SiC wafers, dia 100 mm 4 inch and dia 150mm 6 inch SiC  ingots manufacturers, suppliers & exporters HMT in China. please contact HMT for detailed spec of  SiC ingots and wafers.

Homray Material Technology provide high quality SiC Substrate  and SiC ingots to electronic and optoelectronic industry. Silicon carbide wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , silicon carbide wafer is more suitable for high temperature and high power device. 

SiC wide energy Gap (Band Gap) than the existing Si (silicon) Gap width more than 3 times wider, can withstand more than 10 times the voltage, SiC low loss, high power characteristics suitable for high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment.ompared with traditional Si, the third-generation semiconductor material SiC can reduce the power conversion loss by 50%, reduce the power conversion cost by 20%, and improve the endurance of electric vehicles by 4%.