Homray Material Technology has established the manufacturing technology for free-standing Gallium Nitride wafer GaN substrate which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.

Homray Material Technology's Template Products consist of crystalline layers of gallium nitride (GaN), which are deposited on sapphire substrates. Homray Material Technology's GaN Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.