Homray Material Technology's advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.HomrayMaterial 's key advantage is our wealth of materials growth experience in GaN single crystal growth, owning essential patents in GaN substrates growth technologies. NANOWIN offers standard and customized free-standing GaN substrates with extra low dislocation densities and thick AlN/Sapphire templates, which are suitable for applications in high-power LED, blue LD, high power and high frequency devices and UV LED.